After the implantation process of SiC MOSFETs, depositing a carbon layer on the surface as a cap layer is necessary to prevent silicon sublimation. Silicon sublimation can lead to the formation of surface roughness and step-bunching in SiC semiconductor components.

• Each PVD Carbon equipment can accommodate up to 6 chambers, highly integrated with EFEM.
• Highly customizable chamber configurations based on customer requirements.
• Equipped with SECS / GEM for automation.